三维射频集成应用是硅通孔（TSV）三维集成技术的重要应用发展方向。随着5G与毫米波应用的兴起，基于高阻硅TSV晶圆级封装的薄膜体声波谐振器（FBAR）器件、射频微电子机械系统（RF MEMS）开关器件等逐渐实现商业化应用，TSV三维异质射频集成逐渐成为先进电子信息装备领域工程化应用的关键技术。
本书全面阐述面向三维射频异质集成应用的高阻硅TSV转接板技术，包括设计、工艺、电学特性评估与优化等研究，从TSV、共面波导传输线（CPW）等基本单元结构入手，到集成无源元件（IPD）以及集成样机，探讨金属化对高频特性的影响规律；展示基于高阻硅TSV的集成电感、微带交指滤波器、天线等IPD元件；详细介绍了2.5D集成四通道L波段接收组件、5～10GHz信道化变频接收机、集成微流道散热的2～6GHz GaN功率放大器模块等研究案例。本书也系统综述了高阻硅TSV三维射频集成技术的国内外最新研究进展，并做了详细的对比分析与归纳总结。本书兼顾深度的同时，力求从较为全面的视角，为本领域研究人员提供启发思路，以助力我国在TSV三维射频异质集成技术研究的发展进步。
本书可供微电子先进封装以及射频模组领域研究人员、工程技术人员参考，也可供相关专业高等院校研究生及高年级本科生学习参考。

马盛林，厦门大学机电工程系副教授，北京大学博士，北京大学微纳米加工科学与技术国家重点实验室客座研究员。发表论文50余篇，获得专利20余项，主要研究方向为基于硅通孔的三维集成技术、MEMS及其应用。

Preface by Yufeng Jin
Preface by Shenglin Ma
Acknowledgments
About the authors
1 Introduction to HR-Si interposer technology
1.1 Background
1.2 3D RF heterogeneous integration scheme
1.3 HR-Si interposer technology
1.4 TGV interposer technology
1.5 Summary
1.6 Main work of this book
References
2 Design, process, and electrical verification of HR-Si interposer for 3D heterogeneous RF integration
2.1 Introduction
2.2 Design and fabrication process of HR-Si TSV interposer
2.3 Design and analysis of RF transmission structure built on HR-Si TSV interposer
2.4 Research on HR-Si TSV interposer fabrication process
2.4.1 Double-sided deep reactive ion etching (DRIE) to open HR-Si TSV
2.4.2 Thermal oxidation to form firm insulation layer
2.4.3 Patterned Cu electroplating to achieve metallization and establish RDL layer
2.4.4 Electroless nickel electroless palladium immersion gold (ENEPIG)
2.4.5 Surface passivation
2.5 Electrical characteristics analysis of transmission structure on HR-Si TSV interposer
2.6 Conclusion
References
3 Design, verification, and optimization of novel 3D RF TSV based on HR-Si interposer
3.1 Introduction
3.2 HR-Si TSV-based coaxial-like transmission structure
3.3 Redundant RF TSV transmission structure
3.4 Sample processing and test result analysis
3.5 Optimization of HR-Si TSV interposer
3.6 Conclusion
References
4 HR-Si TSV integrated inductor
4.1 Introduction
4.2 HR-Si TSV interposer integrated planar inductor
4.3 Research on 3D inductor based on HR-Si interposer
4.4 Summary
References
5 Verification of 2.5D/3D heterogeneous RF integration of HR-Si interposer
5.1 Introduction
5.2 Four-channel 2.5D heterogeneous integrated L-band receiver
5.3 3D heterogeneous integrated channelized frequency conversion receiver based on HR-Si interposer
5.3.1 HR-Si interposer integrated microstrip interdigital filter
5.3.2 Design, fabrication, and test of HR-Si interposer
5.3.3 3D heterogeneous integrated assembly and test
5.4 Conclusions
References
6 HR-Si interposer embedded microchannel
6.1 Introduction
6.2 Design of a HR-Si interposer embedded microchannel
6.3 Thermal characteristics analy sis of a TSV interposer embedded microchannel
6.3.1 Simplified calculation based on a variable diffusion angle
6.3.2 Direct calculation based on analytical formula
6.3.3 A fitting formula based on simulation results
6.3.4 Equivalent thermal resistance network based on the high thermal conductivity path
6.4 Process development of a TSV interposer embedded microchannel
6.5 Characterization of cooling capacity of HR-Si interposer with an embedded microchannel
6.6 Evaluation of HR-Si interposer embedded with a cooling microchannel
6.7 Application verification of HR-Si interposer embedded with microchannel
6.8 Conclusions
References
7 Patch antenna in stacked HR-Si interposers
7.1 Introduction
7.2 Theoretical basis of patch antenna
7.3 Design of a patch antenna in stacked HR-Si interposers
7.4 Processing of a patch antenna in stacked HR-Si interposers
7.5 Test and analysis of patch antenna in stacked HR-Si TSV interposer
7.6 Summary
References
8 Through glass via technology
8.1 Introduction
8.2 TGV fabrication
8.3 Metallization of TGV
8.4 Passive devices based on TGV technology
8.4.1 Technology description
8.4.2 MIM capacitor
8.4.3 TGV-based bandpass filter
8.5 Embedded glass fan-out wafer-level package technology
8.5.1 Technology description
8.5.2 AIP enabled by eGFO package technology
8.5.3 3D RF integration enabled by eGFO package technology
8.6 2.5 D heterogeneous integrated L-band receiver based on TGV interposer
8.7 Conclusions
References
9 Conclusion and outlook
Appendix 1 Abbreviations
Appendix