首页  软件  游戏  图书  电影  电视剧

请输入您要查询的图书:

 

图书 半导体物理电子学(第2版影印版)(精)/国外物理名著系列
内容
编辑推荐

“国外物理名著系列”具有权威性、前瞻性和应用性强的特点。本书为其中一册,全面介绍了半导体物理的基本内容,这些内容是理解半导体的物理性质和光电器件制备原理的基础。适合于电子工程,材料科学,物理和化学工程的研究生,也可供半导体工业的过程工程师和设备工程师参考。

内容推荐

本书全面介绍了半导体物理的基本内容,这些内容是理解半导体的物理性质和光电器件制备原理的基础。本书系统性强,合理地安排了物理原理,表征法以及半导体材料和器件的应用等内容,兼顾了物理学家、材料学家和设备工程师的需求。本书反映了半导体技术在过去十年的进步,包括许多新出现并已进入市场的半导体器件。本书适合于电子工程,材料科学,物理和化学工程的研究生,也可供半导体工业的过程工程师和设备工程师参考。

目录

Preface

1.Classification of Solids and Crystal Structure

  1.1 Introduction

  1.2 The Bravais Lattice

  1.3 The Crystal Structure

  1.4 Miller Indices and Crystal Planes

  1.5 The Reciprocal Lattice and Brillouin Zone

  1.6 Types of Crystal Bindings

  1.7 Defects in a Crystalline Solid

Problems

Bibliography

2.Lattice Dynamics

  2.1 Introduction

  2.2 The One-Dimensional Linear Chain

  2.3 Dispersion Relation for a Three-Dimensional Lattice

  2.4 The Concept of Phonons

  2.5 The Density of States and Lattice Spectrum

  2.6 Lattice Specific Heat

Problems

References

Bibliography

3.Semiconductor Statistics

  3.1 Introduction

  3.2 Maxwell-Boltzmann Statistics

  3.3 Fermi-Dirac Statistics

  3.4 Bose-Einstein Statistics

  3.5 Statistics for the Shallow-Impurity States in a Semiconductor

Problems

Bibliography

4.Energy Band Theory

  4.1 Introduction

  4.2 Basic Quantum Concepts and Wave Mechanics

  4.3 The Bloch-Floquet Theorem

  4.4 The Kronig-Penney Model

  4.5 The Nearly Free Electron Approximation

  4.6 The Tight-Binding Approximation

  4.7 Energy Band Structures for Some Semiconductors

  4.8 The Effective Mass Concept for Electrons and Holes

  4.9 Energy Band Structures and Density of States for Low-Dimensional Systems

Problems

References

Bibliography

5.Equilibrium Properties of Semiconductors

  5.1 Introduction

  5.2 Densities of Electrons and Holes in a Semiconductor

  5.3 Intrinsic Semiconductors

  5.4 Extrinsic Semiconductors

  5.5 Ionization Energies of Shallow-and Deep-Level Impurities

  5.6 Hall Effect,Electrical Conductivity,and Hall Mobility

  5.7 Heavy Doping Effects in a Degenerate Semiconductor

Problems

References

Bibliography

6.Excess Carrier Phenomenon in Semiconductors

  6.1 Introduction

  6.2 Nonradiative Recombination: The Shockley-Read-Hall Model

  6.3 Band-to-Band Radiative Recombination

  6.4 Band-to-Band Auger Recombination

  6.5 Basic Semiconductor Equations

  6.6 The Charge-Neutrality Equation

  6.7 The Haynes-Shockley Experiment

  6.8 The Photoconductivity Decay Experiment

  6.9 Surface States and Surface Recombination Velocity

  6.10 Deep-Level Transient Spectroscopy Technique

  6.11 Surface Photovoltage Technique

Problems

References

Bibliography

7. Transport Properties of Semiconductors

7.1 Introduction

7.2 Galvanomagnetic, Thermoelectric, and Thermomagnetic Effects

7.3 Boltzmann Transport Equation

7.4 Derivation of Transport Coefficients for n-type Semiconductors

7.5 Transport Coefficients for the Mixed Conduction Case

7.6 Transport Coefficients for Some Semiconductors

Problems

References

Bibliography

8. Scattering Mechanisms and Carrier Mobilities in Semiconductors.

8.1 Introduction

8.2 Differential Scattering Cross-Section

8.3 Ionized Impurity Scattering

8.4 Neutral Impurity Scattering

8.5 Acoustical Phonon Scattering

8.6 Optical Phonon Scattering

8.7 Scattering by Dislocations

8.8 Electron and Hole Mobilities in Semiconductors

8.9 Hot-Electron Effects in a Semiconductor

Problems

References

Bibliography

9. Optical Properties and Photoelectric Effects

9.1 Introduction

9.2 Optical Constants of a Solid

9.3 Free-Carrier Absorption Process

9.4 Fundamental Absorption Process

9.5 The Photoconductivity Effect

9.6 The Photovoltaic (Dember) Effect

9.7 The Photomagnetoelectric Effect

Problems

References

Bibliography

10. Metal-Semiconductor Contacts

10.1 Introduction

10.2 Metal Work Function and Schottky Effect

10.3 Thermionic Emission Theory

10.4 Ideal Schottky Contact

10.5 Current Flow in a Schottky Diode

10.6 Current-Voltage Characteristics of a Silicon and a GaAs

Schottky Diode

10.7 Determination of Schottky Barrier Height

10.8 Enhancement of Effective Barrier Height

10.9 Applications of Schottky Diodes

10.10 Ohmic Contacts in Semiconductors

Problems

References

Bibliography

11. p-n Junction Diodes

11.1 Introduction

11.2 Equilibrium Properties of a p-n Junction Diode

11.3 p-n Junction Diode Under Bias Conditions

11.4 Minority Carrier Distribution and Current Flow

11.5 Diffusion Capacitance and Conductance

11.6 Minority Carrier Storage and Transient Behavior

11.7 Zener and Avalanche Breakdowns..;

11.8 Tunnel Diodes

11.9 p-n Heterojunction Diodes

11.10 Junction Field-Effect Transistors

Problems

References

Bibliography

12. Solar Cells and Photodetectors

12.1 Introduction

12.2 Photovoltaic Devices (Solar Cells)

12.3 Photodetectors

Problems

References

Bibliography

13. Light-Emitting Devices

13.1 Introduction

13.2 Device Physics, Structures, and Characteristics of LEDs

13.3 LED Materials and Technologies

13.4 Principles of Semiconductor LDs

13.5 Laser Diode (LD) Materials and Technologies

Problems

References

Bibliography

14. Bipolar Junction Transistors

14.1 Introduction

14.2 Basic Device Structures and Modes of Operation

14.3 Current-Voltage Characteristics

14.4 Current Gain, Base Transport Factor, and Emitter Injection Efficiency

14.5 Modeling of a Bipolar Junction Transistor

14.6 Switching and Frequency Response

14.7 Advanced Bipolar Junction Transistors

14.8 Thyristors

14.9 Heterojunction Bipolar Transistors

Problems

References

Bibliography

15. Metal-Oxide-Semiconductor Field-Effect Transistors

15.1 Introduction

15.2 An Ideal Metal-Oxide-Semiconductor System

15.3 Oxide Charges and Interface Traps

15.4 MOS Field-Effect Transistors

15.5 SOI MOSFETS

15.6 Charge-Coupled Devices

Problems

References

Bibliography

16. High-Speed III-V Semiconductor Devices

16.1 Introduction

16.2 Metal-Semiconductor Field-Effect Transistors

16.3 High Electron Mobility Transistors

16.4 Hot-Electron Transistors

16.5 Resonant Tunneling Devices

16.6 Transferred-Electron Devices

Problems

References

Bibliography

Solutions to Selected Problems

Appendix

Index

标签
缩略图
书名 半导体物理电子学(第2版影印版)(精)/国外物理名著系列
副书名
原作名
作者 (美)李
译者
编者
绘者
出版社 科学出版社
商品编码(ISBN) 9787030209405
开本 16开
页数 697
版次 1
装订 精装
字数 854
出版时间 2008-02-01
首版时间 2008-02-01
印刷时间 2008-02-01
正文语种
读者对象 研究人员,普通成人
适用范围
发行范围 公开发行
发行模式 实体书
首发网站
连载网址
图书大类 科学技术-自然科学-物理
图书小类
重量 1.186
CIP核字
中图分类号 O47
丛书名
印张 44.75
印次 1
出版地 北京
245
175
35
整理
媒质 图书
用纸 普通纸
是否注音
影印版本 原版
出版商国别 CN
是否套装 单册
著作权合同登记号 图字01-2007-3525
版权提供者 德国施普林格出版公司
定价
印数 3000
出品方
作品荣誉
主角
配角
其他角色
一句话简介
立意
作品视角
所属系列
文章进度
内容简介
作者简介
目录
文摘
安全警示 适度休息有益身心健康,请勿长期沉迷于阅读小说。
随便看

 

兰台网图书档案馆全面收录古今中外各种图书,详细介绍图书的基本信息及目录、摘要等图书资料。

 

Copyright © 2004-2025 xlantai.com All Rights Reserved
更新时间:2025/5/6 22:36:54