本书系统详尽地介绍了半导体基础纳米结构在太赫兹电场中的响应特性、空间载流子受激运动机理、精确解析及快速分析的方法。涵盖了半导体基础理论，载流子输运方程分析、有限元数值方法解析、等效电路分析方法等内容。

《半导体纳米材料在太赫兹电场中的特性(英文版)》由沈韬编著。

1 Introduction

 References

2 Theoretical Framework

 2.1 Electromagnetic Field Theory

 2.2 Brief Review on Related Semiconductor Physics

2.2.1 Energy band theory

2.2.2 Carrier concentration at thermal equilibrium

 2.3 Charge Transport in Semiconductor

 References

3 Semiconductor Nanostructure in the Static Electric Field 

 3.1 Semiconductor Nanoplate in the Static Field

 3.2 Semiconductor Nanoparticle in the Static Field

4 Response of Elementary Semiconductor Nanostructures in Quasi-Static Electric Field

 4.1 Carrier Dynamics

 4.2 Semiconductor Nanoplate in the Quasi-Static Field

 4.3 Semiconductor Nanoparticle in the Quasi-Static Field

 References

5 Full Wave Analysis

 5.1 Full Wave Analysis of a Semiconductor Nanoparticle

 5.2 Response of Semiconductor Nanoparticle with High Doping Level in Dynamic Field

6 Equivalent Circuit Representation for Conductive Nanostructure

 6.1 Basic Concepts of Equivalent Circuit

 6.2 Equivalent Circuit Representation for the Semiconductor Nanoplate

 6.3 Equivalent Circuit Representation for the Semiconductor Nanoparticle

 6.4 Equivalent Circuit Representation for the Metal Nanoparticle

 References

7 Conclusion

 7.1 Summary

 7.2 Suggestions for Future Work

Appendix A

Appendix B